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TPS2320IPWR Datasheet(PDF) 15 Page - Texas Instruments

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Part # TPS2320IPWR
Description  DUAL HOT SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER
PDF  26 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS2320IPWR Datasheet(HTML) 15 Page - Texas Instruments

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VREG
0.1
µF
IN1 ISET1
RISET1
ISENSE1
RSENSE1
GATE1
DISCH1
+
FAULT
VO1 or VO2
FAULT
TIMER IN2
ISET2
ISENSE2 GATE2
DISCH2
ENABLE
DGND
AGND
RISET2
+
VO1
VO2
ENABLE
1
µF ∼ 10 µF
RSENSE2
1
µF ∼ 10 µF
3 V
∼ 13 V IN1
3 V
∼ 5.5 V IN2
TPS2321
System
Board
TPS2320
TPS2321
www.ti.com
SLVS276F – MARCH 2000 – REVISED JULY 2013
APPLICATION INFORMATION
Figure 26 shows a typical dual hot-swap application. The pullup resistor at FAULT should be relatively large
(e.g., 100 k
Ω) to reduce power loss, unless it is required to drive a large load.
Figure 26. Typical Dual Hot-Swap Application
INPUT CAPACITOR
A 0.1-
μF ceramic capacitor in parallel with a 1-μF ceramic capacitor should be placed on the input power
terminals near the connector on the hot-plug board to help stabilize the voltage rails on the cards. The
TPS2320/01 does not need to be mounted near the connector or to these input capacitors. For applications with
more severe power environments, a 2.2-
μF, or higher, ceramic capacitor is recommended near the input
terminals of the hot-plug board. A bypass capacitor for IN1 and for IN2 should be placed close to the device.
OUTPUT CAPACITOR
A 0.1-
μF ceramic capacitor is recommended per load on the TPS2320/21; these capacitors should be placed
close to the external FETs and to TPS2320/21. A larger bulk capacitor is also recommended on the load. The
value of the bulk capacitor should be selected based on the power requirements and the transients generated by
the application.
EXTERNAL FET
To deliver power from the input sources to the loads, each channel needs an external N-channel MOSFET. A
few widely used MOSFETs are shown in Table 3. But many other MOSFETs on the market can also be used
with TPS23xx in hot-swap systems.
Table 3. Some Available N-Channel MOSFETs
CURRENT RANGE
PART NUMBER
DESCRIPTION
MANUFACTURER
(A)
IRF7601
N-channel, rDS(on) = 0.035 Ω, 4.6 A, Micro-8
International Rectifier
0 to 2
MTSF3N03HDR2
N-channel, rDS(on) = 0.040 Ω, 4.6 A, Micro-8
ON Semiconductor
MMSF5N02HDR2
Dual N-channel, rDS(on) = 0.04 Ω, 5 A, SO-8
ON Semiconductor
Copyright © 2000–2013, Texas Instruments Incorporated
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Product Folder Links: TPS2320 TPS2321



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