2N7002

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Product data sheet

Rev. 7 — 8 September 2011

6 of 13

NXP Semiconductors

2N7002

60 V, 300 mA N-channel Trench MOSFET

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature

003aab352

0

0.2

0.4

0.6

0.8

1

012

34

(A)

10

5

4.5

4

3.5

003aab353

0

2000

4000

6000

8000

10000

0

0.2

0.4

0.6

0.8

1

(m

Ω)

4

5

4.5

10

003aab354

0

0.2

0.4

0.6

0.8

1

0246

(A)

°C

25

°C

−60

180

120

060

03aa28

1.2

0.6

1.8

2.4

a

0