2N7002 datasheet(1/13 Pages) NXP

Part #	2N7002

Description	60 V, 300 mA N-channel Trench MOSFET

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using

Trench MOSFET technology.

1.2 Features and benefits

 Suitable for logic level gate drive

sources

 Very fast switching

 Surface-mounted package

 Trench MOSFET technology

1.3 Applications

 Logic level translators

 High-speed line drivers

1.4 Quick reference data

2.

Pinning information

2N7002

60 V, 300 mA N-channel Trench MOSFET

Rev. 7 — 8 September 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

25 °C

≤ Tj ≤ 150 °C

--60

V

ID

drain current

VGS =10V; Tsp =25 °C; see Figure 1;

see Figure 3

-

300

mA

Ptot

total power dissipation

Tsp =25 °C; see Figure 2

--0.83

W

Static characteristics

RDSon

drain-source on-state

resistance

VGS =10V; ID =500 mA; Tj =25°C;

see Figure 6; see Figure 8

-2.8

5

Ω

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

SOT23 (TO-236AB)

2S

source

3

D

drain

12

3

S

D

G

mbb076

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