1;3 Semiconductors

Product specification

Thyristors

BT151 series C

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated thyristors in a plastic

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

envelope, intended for use in

applications

requiring

high

BT151-

500C

650C

800C

bidirectional

blocking

voltage

V

Repetitive peak off-state

500

650

800

V

capability and high thermal cycling

V

RRM

voltages

performance. Typical applications

I

T(AV)

Average on-state current

7.5

7.5

7.5

A

include motor control, industrial

I

T(RMS)

RMS on-state current

12

12

12

A

and domestic lighting, heating and

I

TSM

Non-repetitive peak on-state

100

100

100

A

static switching.

current

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

cathode

2

anode

3

gate

tab

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 60134).

SYMBO

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

L

-500C

-650C

-800C

V

Repetitive peak

-

500

1

650

1

800

V

V

RRM

off-state voltages

I

T(AV)

Average on-state

half sine wave; T

mb

≤ 109 ˚C

-

7.5

A

current

I

T(RMS)

RMS on-state current

all conduction angles

-

12

A

I

TSM

Non-repetitive peak

half sine wave; T

on-state current

prior to surge

t = 10 ms

-

100

A

t = 8.3 ms

-

110

A

I

t = 10 ms

-

50

A

dI

Repetitive rate of rise of I

-

50

A/

μs

on-state current after

dI

μs

triggering

I

GM

Peak gate current

-

2

A

V

GM

Peak gate voltage

-

5

V

V

RGM

Peak reverse gate

-

5

V

voltage

P

GM

Peak gate power

-

5

W

P

G(AV)

Average gate power

over any 20 ms period

-

0.5

W

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction

-

125

˚C

temperature

ak

g

12 3

tab

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/

μs.

April 2004

1

Rev 1.000