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LTC1872 Datasheet(PDF) 25 Page - Linear Technology

Part # LTC1872
Description  Wide Input Range, No RSENSE Current Mode Boost, Flyback and SEPIC Controller
PDF  36 Pages
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC1872 Datasheet(HTML) 25 Page - Linear Technology

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LTC1871
25
1871fe
APPLICATIONS INFORMATION
It is worth noting here that SEPIC converters that operate
at high duty cycles (i.e., that develop a high output volt-
age from a low input voltage) can have very high input
currents, relative to the output current. Be sure to check
that the maximum load current will not overload the input
supply.
SEPIC Converter: Inductor Selection
For most SEPIC applications the equal inductor values
will fall in the range of 10μH to 100μH. Higher values will
reduce the input ripple voltage and reduce the core loss.
Lower inductor values are chosen to reduce physical size
and improve transient response.
Like the boost converter, the input current of the SEPIC
converter is calculated at full load current and minimum
input voltage. The peak inductor current can be significantly
higher than the output current, especially with smaller in-
ductors and lighter loads. The following formulas assume
CCM operation and calculate the maximum peak inductor
currents at minimum VIN:
IL1(PEAK) = 1+
2
•IO(MAX) •
VO + VD
VIN(MIN)
IL2(PEAK) = 1+
2
•IO(MAX) •
VIN(MIN) + VD
VIN(MIN)
The ripple current in the inductor is typically 20% to 40%
(i.e., a range of ‘χ’ from 0.20 to 0.40) of the maximum
average input current occurring at VIN(MIN) and IO(MAX) and
ΔIL1 = ΔIL2. Expressing this ripple current as a function of
the output current results in the following equations for
calculating the inductor value:
L
=
VIN(MIN)
IL • f
•DMAX
where:
IL = •IO(MAX) •
DMAX
1– DMAX
By making L1 = L2 and winding them on the same core,
the value of inductance in the equation above is replace
by 2L due to mutual inductance. Doing this maintains the
same ripple current and energy storage in the inductors. For
example, a Coiltronix CTX10-4 is a 10μH inductor with two
windings. With the windings in parallel, 10μH inductance is
obtained with a current rating of 4A (the number of turns
hasn’t changed, but the wire diameter has doubled). Split-
ting the two windings creates two 10μH inductors with a
current rating of 2A each. Therefore, substituting 2L yields
the following equation for coupled inductors:
L1
=L2=
VIN(MIN)
2• IL • f
•DMAX
Specify the maximum inductor current to safely handle
IL(PK) specified in the equation above. The saturation
current rating for the inductor should be checked at the
minimum input voltage (which results in the highest
inductor current) and maximum output current.
SEPIC Converter: Power MOSFET Selection
The power MOSFET serves two purposes in the LTC1871:
it represents the main switching element in the power path,
and its RDS(ON) represents the current sensing element
for the control loop. Important parameters for the power
MOSFET include the drain-to-source breakdown voltage
(BVDSS), the threshold voltage (VGS(TH)), the on-resistance
(RDS(ON))versusgate-to-sourcevoltage,thegate-to-source
and gate-to-drain charges (QGS and QGD, respectively),
the maximum drain current (ID(MAX)) and the MOSFET’s
thermal resistances (RTH(JC) and RTH(JA)).
The gate drive voltage is set by the 5.2V INTVCC low
dropout regulator. Consequently, logic-level threshold
MOSFETs should be used in most LTC1871 applications.
If low input voltage operation is expected (e.g., supplying
power from a lithium-ion battery), then sublogic-level
threshold MOSFETs should be used.
The maximum voltage that the MOSFET switch must
sustain during the off-time in a SEPIC converter is equal
to the sum of the input and output voltages (VO + VIN).
As a result, careful attention must be paid to the BVDSS
specifications for the MOSFETs relative to the maximum
actual switch voltage in the application. Many logic-level
devices are limited to 30V or less. Check the switching
waveforms directly across the drain and source terminals
of the power MOSFET to ensure the VDS remains below
the maximum rating for the device.



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