STB18NF25 datasheet(4/18 Pages) STMICROELECTRONICS

4 / 18 page

Electrical characteristics

STB18NF25, STD18NF25

4/18

Doc ID 16785 Rev 3

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0, ID = 1 mA

250

IDSS

Zero gate voltage drain

current

VGS= 0, VDS = 250 V,

µA

VGS= 0

VDS = 250 V,Tc=125 °C

µA

IGSS

Gate body leakage current

VDS = 0, VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 8.5 A

0.14

0.165

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID = 8.5 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz, VGS=0

1000

178

Co(tr)

Equivalent capacitance time

VDS = 0 to 200 V, VGS=0

106

Co(er)

Equivalent capacitance

energy related

-79

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 200 V, ID = 17 A

VGS =10 V (see Figure 17)

29.5

4.8

15.6

Gate input resistance

f=1 MHz gate DC bias=0 test

signal level=20 mV open

drain

-2

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