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STB18NF25 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB18NF25
Description  N-channel 250 V, 0.14 廓, 17 A low gate charge STripFET??II Power MOSFET in D2PAK and DPAK packages
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB18NF25 Datasheet(HTML) 5 Page - STMicroelectronics

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STB18NF25, STD18NF25
Electrical characteristics
Doc ID 16785 Rev 3
5/18
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=125 V, ID=8.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
-
8.8
17.2
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=125 V, ID=8.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
-
21
8.8
-
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
-
17
68
A
A
VSD
(2)
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
ISD=17 A, VGS=0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs,
VDD = 50 V
(see Figure 18)
-
157
0.91
11.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs,
VDD = 50 V, Tj=150 °C
(see Figure 18)
-
196
1.34
13.7
ns
µC
A



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