MTP12P10

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 0.25 mA)

V(BR)DSS

100

—

Vdc

Zero Gate Voltage Drain Current

(VDS = Rated VDSS, VGS = 0)

(VDS = Rated VDSS, VGS = 0, TJ = 125°C)

IDSS

—

—

10

100

µAdc

Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)

IGSSF

—

100

nAdc

Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)

IGSSR

—

100

nAdc

ON CHARACTERISTICS*

Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)

TJ = 100°C

VGS(th)

2.0

1.5

4.5

4.0

Vdc

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 6.0 Adc)

RDS(on)

—

0.3

Ohm

Drain–Source On–Voltage (VGS = 10 V)

(ID = 12 Adc)

(ID = 6.0 Adc, TJ = 100°C)

VDS(on)

—

—

4.2

3.8

Vdc

Forward Transconductance (VDS = 15 V, ID = 6.0 A)

gFS

2.0

—

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

See Figure 10

Ciss

—

920

pF

Output Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

See Figure 10

Coss

—

575

Reverse Transfer Capacitance

See Figure 10

Crss

—

200

SWITCHING CHARACTERISTICS* (TJ = 100°C)

Turn–On Delay Time

(VDD = 25 V, ID = 0.5 Rated ID,

RG = 50 Ω)

See Figures 12 and 13

td(on)

—

50

ns

Rise Time

(VDD = 25 V, ID = 0.5 Rated ID,

RG = 50 Ω)

See Figures 12 and 13

tr

—

150

Turn–Off Delay Time

RG = 50 Ω)

See Figures 12 and 13

td(off)

—

150

Fall Time

tf

—

150

Total Gate Charge

(VDS = 0.8 Rated VDSS,

ID = Rated ID, VGS = 10 V)

See Figure 11

Qg

33 (Typ)

50

nC

Gate–Source Charge

(VDS = 0.8 Rated VDSS,

ID = Rated ID, VGS = 10 V)

See Figure 11

Qgs

16 (Typ)

—

Gate–Drain Charge

See Figure 11

Qgd

17 (Typ)

—

SOURCE–DRAIN DIODE CHARACTERISTICS*

Forward On–Voltage

(IS = Rated ID,

VGS = 0)

VSD

4.0 (Typ)

5.5

Vdc

Forward Turn–On Time

(IS = Rated ID,

VGS = 0)

ton

Limited by stray inductance

Reverse Recovery Time

VGS = 0)

trr

300 (Typ)

—

ns

INTERNAL PACKAGE INDUCTANCE (TO–204)

Internal Drain Inductance

(Measured from the contact screw on the header closer

to the source pin and the center of the die)

Ld

5.0 (Typ)

—

nH

Internal Source Inductance

(Measured from the source pin, 0.25

″ from the package

to the source bond pad)

Ls

12.5 (Typ)

—

INTERNAL PACKAGE INDUCTANCE (TO–220)

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25

″ from package to center of die)

Ld

3.5 (Typ)

4.5 (Typ)

—

—

nH

Internal Source Inductance

(Measured from the source lead 0.25

″ from package to source bond pad)

Ls

7.5 (Typ)

—

* Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.