2SC3710A

2010-12-21

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

2SC3710A

High-Power Switching Applications

• Complementary to 2SA1452A

Characteristics

Symbol

Rating

Unit

Collector-base voltage

80

V

Collector-emitter voltage

80

V

Emitter-base voltage

6

V

Collector current

12

A

Base current

2

A

Collector power dissipation

(Tc = 25°C)

30

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)