RN1970,RN1971

2007-11-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1970,RN1971

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in US6 (ultra super mini type 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2970~RN2971

Equivalent Circuit

Characterisstic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

JEDEC

―

JEITA

―

TOSHIBA

2-2J1B

Weight: 6.8mg (typ.)

Unit: mm