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RN1971 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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RN1971 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() RN1970,RN1971 2007-11-01 2 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cut-off current ICBO ― VCB = 5V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO ― VEB = 5V, IC = 0 ― ― 100 nA DC current gain hFE ― VCE = 5V, IC = 1mA 120 ― 700 ― Collector-emitter saturation voltage VCE (sat) ― IC = 5mA, IB = 0.25mA ― 0.1 0.3 V Translation frequency fT ― VCE = 10V, IC = 5mA ― 250 ― MHz Collector output capacitance Cob ― VCB = 10V, IE = 0, f = 1MHz ― 3 6 pF RN1970 3.29 4.7 6.11 Input resistor RN1971 R1 ― ― 7 10 13 kΩ |
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