RN2101

∼RN2106

2007-11-01

1

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101

4.7

4.7

RN2102

10

10

RN2103

22

22

RN2104

47

47

RN2105

2.2

47

RN2106

4.7

47

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101, RN2102, RN2103,

RN2104, RN2105, RN2106

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Built-in bias resistors

Simplified circuit design

Fewer parts and simplified manufacturing process

Complementary to RN1101~RN1106

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2101~2106

−50

V

RN2101~2104

−10

Emitter-base voltage

RN2105, 2106

−5

V

Collector current

−100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN2101~2106

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

JEDEC

―

JEITA

―

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Unit: mm