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RN2102 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN2102
Description  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
PDF  8 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2102 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN2101
∼RN2106
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = −50 V, IE = 0
−100
Collector cut-off
current
RN2101~2106
ICEO
VCE = −50 V, IB = 0
−500
nA
RN2101
−0.82
−1.52
RN2102
−0.38
−0.71
RN2103
−0.17
−0.33
RN2104
VEB = −10 V, IC = 0
−0.082
−0.15
RN2105
−0.078
−0.145
Emitter cut-off current
RN2106
IEBO
VEB = −5 V, IC = 0
−0.074
−0.138
mA
RN2101
30
RN2102
50
RN2103
70
RN2104
80
RN2105
80
DC current gain
RN2106
hFE
VCE = −5 V,
IC = −10 mA
80
Collector-emitter
saturation voltage
RN2101~2106
VCE (sat)
IC = −5 mA,
IB = −0.25 mA
−0.1
−0.3
V
RN2101
−1.1
−2.0
RN2102
−1.2
−2.4
RN2103
−1.3
−3.0
RN2104
−1.5
−5.0
RN2105
−0.6
−1.1
Input voltage (ON)
RN2106
VI (ON)
VCE = −0.2 V,
IC = −5 mA
−0.7
−1.3
V
RN2101~2104
−1.0
−1.5
Input voltage (OFF)
RN2105, 2106
VI (OFF)
VCE = −5 V,
IC = −0.1 mA
−0.5
−0.8
V
Transition frequency
RN2101~2106
fT
VCE = −10 V,
IC = −5 mA
200
MHz
Collector Output
capacitance
RN2101~2106
Cob
VCB = −10 V, IE = 0,
f = 1 MHz
3
6
pF
RN2101
3.29
4.7
6.11
RN2102
7
10
13
RN2103
15.4
22
28.6
RN2104
32.9
47
61.1
RN2105
1.54
2.2
2.86
Input resistor
RN2106
R1
3.29
4.7
6.11
kΩ
RN2101~2104
0.9
1.0
1.1
RN2105
0.0421 0.0468 0.0515
Resistor ratio
RN2106
R1/R2
0.09
0.1
0.11



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