TPCC8105 datasheet(3/7 Pages) TOSHIBA

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TPCC8105

2010-09-03

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

Drain cutoff current

IDSS

VDS = −30 V, VGS = 0 V

⎯

−10

μA

V(BR)DSS

ID = −10 mA, VGS = 0 V

−30

⎯

Drain-source breakdown voltage

V(BR)DSX

ID = −10 mA, VGS = 10 V (Note 4)

−21

⎯

Gate threshold voltage

Vth

VDS = −10 V, ID = −0.5 mA

−0.8

⎯

−2.0

VGS = −4 .5V, ID = −11.5 A

⎯

10.4

Drain-source on-resistance

RDS(ON)

VGS = −10 V, ID = −11.5 A

⎯

7.8

Input capacitance

Ciss

⎯

3240

⎯

Reverse transfer capacitance

Crss

⎯

520

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

580

⎯

Rise time

⎯

Turn-on time

ton

⎯

Fall time

⎯

110

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

330

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge 1

Qgs1

⎯

7.6

⎯

Gate-drain (“Miller”) charge

Qgd

VDD ≈ −24 V, VGS = −10 V,

ID = −23 A

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse

(Note 1)

IDRP

⎯

−69

Forward voltage (diode)

VDSF

IDR = −23 A, VGS = 0 V

⎯

1.2

Note 4: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum

rating of drain-source voltage.

VDD ≈ −15 V

−10 V

VGS 0 V

ID = −11.5 A

VOUT

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