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STL6N3LLH6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL6N3LLH6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. October 2012 Doc ID 023231 Rev 2 1/14 14 STL6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet — preliminary data Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Applications ■ Switching application Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max. ID PTOT STL6N3LLH6 30 V 0.025 Ω (VGS=10 V) 0.04 Ω (VGS=4.5 V) 6 A 2.4W PowerFLAT™ 2x2 1 2 3 6 5 4 1 2 3 1(D) 2(D) 3(G) 6(D) 5(D) 4(S) D S AM11269v1 Table 1. Device summary Order code Marking Package Packaging STL6N3LLH6 STG1 PowerFLAT™ 2x2 Tape and reel www.st.com |
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