MP18021―100V HIGH FREQUENCY HALF-BRIDGE GATE DRIVER

MP18021 Rev. 1.0

www.MonolithicPower.com

3

8/8/2012

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© 2012 MPS. All Rights Reserved.

ELECTRICAL CHARACTERISTICS

noted.

Parameter

Symbol Condition

Min

Typ

Max

Units

Supply Currents

VDD quiescent current

INL=INH=0

100

150

µA

VDD operating current

fsw=500kHz

2.8

3.5

mA

Floating driver quiescent current

INL=INH=0

60

90

µA

Floating driver operating current

fsw=500kHz

2.1

3

mA

Leakage Current

BST=SW=100V

0.05

1

A

Inputs

INL/INH High

2

2.4

V

INL/INH Low

1

1.4

V

INL/INH

internal

pull-down

resistance

185

k



Under Voltage Protection

VDD rising threshold

7.7

8.1

8.5

V

VDD hysteresis

0.5

V

(BST-SW) rising threshold

6.7

7.1

7.5

V

(BST-SW) hysteresis

0.55

V

Bootstrap Diode

Bootstrap diode VF @ 100uA

0.5

V

Bootstrap diode VF @ 100mA

0.9

V

Bootstrap diode dynamic R

@ 100mA

2.5



Low Side Gate Driver

Low level output voltage

0.15

0.22

V

High level output voltage to rail

0.45

0.6

V

Peak pull-up current

1.5

A

2.5

A

Peak pull-down current

2.5

A

3.5

A

Floating Gate Driver

Low level output voltage

0.15

0.22

V

High level output voltage to rail

0.45

0.6

V

Peak pull-up current

1.5

A

2.5

A

Peak pull-down current

2.5

A

3.5

A