AM28F020 datasheet(31/35 Pages) AMD

31 / 35 page

Am28F020

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. 25

°C, 12 V V

PP.

2. Maximum time specified is lower than worst case. Worst case is derived from the Flasherase/Flashrite pulse count

(Flasherase = 1000 max and Flashrite = 25 max). Typical worst case for program and erase is significantly less than the actual

device limit.

LATCHUP CHARACTERISTICS

PIN CAPACITANCE

Note: Sampled, not 100% tested. Test conditions TA = 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Limits

Comments

Min

Typ

(Note 1)

Max

(Note 2)

Unit

Chip Erase Time

sec

Excludes 00h programming prior to erasure

Chip Programming Time

sec

Excludes system-level overhead

Write/Erase Cycles

10,000

Cycles

Parameter

Min

Max

Input Voltage with respect to VSS on all pins except I/O pins (Including A9 and VPP)

–1.0 V

13.5 V

Input Voltage with respect to VSS on all pins I/O pins

–1.0 V

VCC + 1.0 V

Current

–100 mA

+100 mA

Includes all pins except VCCTest conditions: VCC = 5.0 V, one pin at a time.

Parameter

Symbol

Parameter Description

Test Conditions

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

COUT

Output Capacitance

VOUT = 0

CIN2

VPP Input Capacitance

VPP = 0

Parameter

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C10

Years

125

°C20

Years

AM28F020 Datasheet(PDF) 31 Page - Advanced Micro Devices

AM28F020 Datasheet(HTML) 31 Page - Advanced Micro Devices

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