REV. E

–4–

AMP02

2. –IN

3. +IN

4. V–

5. REFERENCE

6. OUT

7. V+

9. SENSE

CONNECT SUBSTRATE TO V–

8

1

DIE SIZE 0.103 inch

0.116 inch, 11,948 sq. mils

(2.62 mm

2.95 mm, 7.73 sq. mm)

NOTE: PINS 1 and 8 are KELVIN CONNECTED

Die Characteristics

AMP02 GBC

Parameter

Symbol

Conditions

Limits

Unit

Input Offset Voltage

200

µV max

Output Offset Voltage

8

mV max

±4.8 V to ±18 V

G = 1000

110

Power Supply

PSR

G = 100

110

dB

Rejection

G = 10

95

G = 1

75

Input Bias Current

20

nA max

Input Offset Current

10

nA max

Input Voltage Range

IVR

Guaranteed by CMR Tests

±11

V min

±11 V

G = 1000

110

Common-Mode

CMR

G = 100

110

dB

Rejection

G = 10

95

G = 1

75

Gain Equation Accuracy

G

=

50 k

Ω

+1, G =1000

0.7

% max

Output Voltage Swing

Ω±12

V min

Supply Current

6

mA max

*Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not

guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection. Although the

AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices

subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended

to avoid performance degradation or loss of functionality.