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CD00222640 Datasheet(PDF) 5 Page - STMicroelectronics

Part # CD00222640
Description  N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

CD00222640 Datasheet(HTML) 5 Page - STMicroelectronics

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STx42N65M5
Electrical characteristics
Doc ID 15317 Rev 3
5/18
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see
Figure 19)
-
61
24
65
13
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
33
132
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 33 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 24)
-
400
7
35
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 33 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see
Figure 24)
-
532
10
38
ns
µC
A



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