LM6172 datasheet(19/25 Pages) TI

19 / 25 page

LM6172

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SNOS792D – MAY 1999 – REVISED MARCH 2013

Where

•

PD is the power dissipation in a device

•

TJ(max) is the maximum junction temperature

•

TA is the ambient temperature

•

θJA is the thermal resistance of a particular package

For example, for the LM6172 in a SOIC-8 package, the maximum power dissipation at 25°C ambient

temperature is 780mW.

Thermal resistance,

θJA, depends on parameters such as die size, package size and package material. The

smaller the die size and package, the higher

θJA becomes. The 8-pin DIP package has a lower thermal

resistance (95°C/W) than that of 8-pin SO (160°C/W). Therefore, for higher dissipation capability, use an 8-

pin DIP package.

The total power dissipated in a device can be calculated as: PD = PQ + PL

(2)

PQ is the quiescent power dissipated in a device with no load connected at the output. PL is the power dissipated

in the device with a load connected at the output; it is not the power dissipated by the load.

Furthermore,

PQ = supply current x total supply voltage with no load

PL = output current x (voltage difference between supply voltage and output voltage of the same supply)

For example, the total power dissipated by the LM6172 with VS = ±15V and both channels swinging output

voltage of 10V into 1k

Ω is

PD = PQ + PL

2[(2.3mA)(30V)] + 2[(10mA)(15V

− 10V)]

138mW + 100mW

238mW

Application Circuits

Figure 50. I-to-V Converters

Figure 51. Differential Line Driver

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LM6172 Datasheet(PDF) 19 Page - Texas Instruments