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Revision 1.11

5 - 20

AS5115

Datasheet - Electrical Character i s t ics

6 Electrical Characteristics

Unless otherwise noted in this specification, all defined tolerances of parameters are assured over the whole operation conditions range and also

over lifetime.

Table 3. Operating Conditions

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Positive Supply Voltage

4.5

5.5

V

Negative Supply Voltage

0.0

0.0

V

T_amb

Ambient temperature

-40

150

ºC

Table 4. DC/AC Characteristics for Digital Inputs and Outputs

Symbol

Parameter

Condition

Min

Typ

Max

Unit

CMOS Input

V_IH

High level input voltage

V

V_IL

Low level input voltage

0

V

I_LEAK

Input Leakage Current

1

µA

CMOS Output

V_OH

High level output voltage

4mA

V

V_OL

Low level output voltage

4mA

0

V

C_L

Capacitive Load

35

pF

CMOS Output Tristate

I_OZ

Tristate Leakage Current

1

µA

Table 5. Magnetic Input Specification

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Magnetic input field amplitude

Peak to peak at the radius

(=1mm) of the hall array

32

160

mT

B_offset

Magnetic field offset

Within the linear range of the magnet

-10

+10

mT

Rotational speed

Maximum 30,000 RPM

0

500

Hz

Table 6. Electrical System Specifications

Symbol

Parameter

Condition

Min

Typ

Max

Unit

IDD

Current Consumption

Maximum value derived at maximum I_H

(Hall Bias Current)

28

mA

Power up time

1.275

ms

Propagation delay

-40ºC to 150ºC

18

22

30

µs

M

Magnetic Sensitivity

Version: AS5115

10

60

mV / mT

Version: AS5115A

20.72

28

35.28

Analog output voltage amplitude

(peak to peak)

1.38

1.94

2.5

V

-40ºC to 150ºC

-1

+1

%

AM

Sin / Cos Amplitude mismatch

25ºC

-2

+2

%

Output DC offset voltage

At no input signal; programmable OTP

setting (see page 8)

1.47

1.5

1.53

V

2.45

2.5

2.55

DC Offset Drift

-40ºC to 150ºC

-50

+50

µV/ºC