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BC807 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part # BC807
Description  0.3 Watts, PNP Plastic-Encasulate Transistor
PDF  3 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BC807 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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SOT-23
◇
Ideally suited for automatic insertion
◇
Epitaxial planar die construction
◇
For switching, AF driver and amplifer applications
◇
Complementary NPN type available (BC817)
◇
Case : SOT- 23, Molded plastic
◇
Terminals : Solderable per MIL-STD-202, method 208
◇
Weight : 0.008grams (approximately)
BC807-16
SOT-23
3K / 7 " Reel
RF
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Units
IC = -10 μAIE = 0
V
IC = -10 mA
IB = 0
V
A
W
IE = -1 μAIC = 0
V
VCB = -45 V
IE = 0
μA
VCB = -40 V
IB = 0
μA
VEB = -4 V
IC = 0
μA
IC = -500 mA
IB = 50 mA
V
IC = -500 mA
IB = 50 mA
V
Transition Frequency
VCE = -5 V
IC = -10 mA
f = 100 MHz
MHz
°C
°C
Units
807-16
807-25
807-40
Version : E13
Manufacture code
B0
Emitter Cut-Off Current
-0.1
150
-55 to +150
IEBO
Parameter
Parameter
Symbol
Base-Emitter Saturation Voltage
VBE(sat)
fT
TJ
TSTG
-1.2
Max
100
160
250
100
RFG
Package
Packing
Packing code
Power Dissipation
Storage Temperature Range
Symbol
Junction Temperature
ICBO
Note : Detail please see "Ordering Information(detail, example)" below.
BC807-16/-25/-40
Mechanical Data
◇
Case material : Molded plastic, UL flammability
classification rating 94V-0
Small Signal Product
0.3 Watts, PNP Plastic-Encasulate Transistor
Features
◇
Marking : -16: 5A, -25: 5B, -40: 5C
Part No.
◇
Moisture sensitivity : Level 1 per J-STD-020C
◇
Lead free plating
Ordering Information (example)
Packing code
(Green)
Collector-Emitter Breakdown Voltage
VCE(sat)
Collector Current - Continuous
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
ICEO
Collector Cut-Off Current
VCEO
BC807-40
VCBO
BC807-16
BC807-25
Collector-Base Breakdown Voltage
-50
-0.1
-0.7
IC
-0.5
0.3
-5
PD
-0.2
-45
VEBO
DC Current Gain
IC = -100 mA
VCE = -1 V
hFE(1)
250
400
600
Min


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