T5557 datasheet(20/30 Pages) ATMEL

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T5557

4517E–RFID–02/03

Figure 25. Measurement Setup for I

DD and Vmod

Programming time

From last command gap

to re-enter read mode

(64 + 648 internal clocks)

prog

55.7

Endurance

Erase all / Write all (4)

cycle

100000

Cycles

9.1

Data retention

Top = 55

°C (4)

retention

Years

9.2

Top = 150

°C (4)

retention

hrs

9.3

Top = 250

°C (4)

retention

hrs

Resonance capacitor

Mask option(5)

11.1

Microdule capacitor

parameters

Capacitance tolerance

amb

313.5

330

346.5

11.2

Temperature coefficient

TBD

11.3

TBD

Electrical Characteristics

Tamb = +25°C; fcoil = 125 kHz; unless otherwise specified

No.

Parameters

Test Conditions

Symbol

Min.

Typ.

Max.

Unit

Type*

*) Type means: T: directly or indirectly tested during production; Q: guaranteed based on initial product qualification data

Notes:

1. I

DD measurement setup R = 100 k; VCLK = Vcoil = 5 V: EEPROM programmed to 00 ... 000 (erase all); chip in modulation

defeat. I

DD = (VOUTmax - VCLK)/R

2. Current into Coil 1/Coil 2 is limited to 10 mA. The damping circuitry has the same structure as the e5550. The damping

characteristics are defined by the internally limited supply voltage (= minimum AC coil voltage)

3. V

mod measurement setup: R = 2.3 k; VCLK = 3 V; setup with modulation enabled (see Figure 25).

4. Since EEPROM performance is influenced by assembly processes, Atmel confirms the parameters for DOW (tested dice

on uncutted wafer) delivery.

5. The tolerance of the on-chip resonance capacitor C

r is ±10% at 3s over whole production. The capacitor tolerance is

±3% at 3

s on a wafer basis.

6. The tolerance of the microcodule resonance capacitor Cr is ±5% at 3s over whole production.

Coil 1

T5557

Coil 2

Substrate

CLK

OUTmax

750

BAT68

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