BCP69 datasheet(15/24 Pages) NXP

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BCP69_BC869_BC69PA

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Product data sheet

Rev. 7 — 12 October 2011

15 of 24

NXP Semiconductors

BCP69; BC869; BC69PA

20 V, 2 A PNP medium power transistors

VCE = 1V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb =25 C

Fig 19. hFE selection -25: DC current gain as a

function of collector current; typical values

Fig 20. hFE selection -25: collector current as a

function of collector-emitter voltage; typical

values

VCE = 1V

(1) Tamb = 55 C

(2) Tamb =25 C

(3) Tamb = 100 C

IC/IB =10

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Fig 21. hFE selection -25: base-emitter voltage as a

function of collector current; typical values

Fig 22. hFE selection -25: collector-emitter saturation

voltage as a function of collector current;

typical values

006aac707

200

100

300

400

hFE

IC (A)

-10-4

-10

-1

-10-3

-10-1

-10-2

(1)

(2)

(3)

006aab404

(A)

VCE (V)

−2.4

−2.0

−1.6

−1.2

−0.8

−0.4

−1

−5

−2

−3

−4

IB (mA) = −12.0

−10.8

−2.4

−3.6

−4.8

−6.0

−1.2

−9.6

−8.4

−7.2

006aac708

-0.4

-0.8

-1.2

VBE

(V)

0.0

IC (mA)

-10-1

-104

-103

-1

-102

-10

(1)

(2)

(3)

006aac709

–10–1

–10–2

–1

VCEsat

(V)

–10–3

IC (mA)

–10–1

–104

–103

–1

–102

–10

(1)

(2)

(3)

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