BUJD203AX datasheet(5/14 Pages) PHILIPS

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BUJD203AX

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Product data sheet

Rev. 01 — 27 September 2010

5 of 14

NXP Semiconductors

BUJD203AX

NPN power transistor with integrated diode

Thermal characteristics

Isolation characteristics

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-h)

thermal resistance from

junction to heatsink

with heatsink compound; see Figure 5

--4.8

K/W

Rth(j-a)

thermal resistance from

junction to ambient

in free air

K/W

Fig 5.

Transient thermal impedance from junction to heatsink as a function of pulse duration

001aag169

10−2

10−1

Zth(j-h)

(K/W)

10−3

tp (s)

10−6

102

10−3

10−5

10−1

10−2

10−4

1/f

δ =

δ = 0.5

0.2

0.1

0.05

0.02

Table 6.

Isolation characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Visol(RMS)

RMS isolation voltage

50 Hz

≤ f ≤ 60 Hz; RH ≤ 65 %; Th =25°C;

from all terminals to external heatsink; clean

and dust free

2500

Cisol

isolation capacitance

Th = 25 °C; f = 1 MHz; from collector to

external heatsink

-10

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