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LM3697 Datasheet(PDF) 2 Page - Texas Instruments |
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LM3697 Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 36 page ![]() A B C D 1 2 3 Top View D C B A 1 2 3 Bottom View LM3697 SNOSCS2A – NOVEMBER 2013 – REVISED DECEMBER 2013 www.ti.com Application Circuit Component List Current/Voltage Rating Component Manufacturer Value Part Number Size (mm) (Resistance) L TDK 10 µH VLF302512MT-100M 2.5 mm x 3.0 mm x 1.2 620 mA/0.25 Ω mm COUT TDK 1 µF C2012X5R1H105 0805 50V CIN TDK 2.2 µF C1005X5R1A225 0402 10V Diode On-Semi Schottky NSR0240V2T1G SOD-523 40V, 250 mA Connection Diagram Figure 1. 12-Bump DSBGA Package YFQ0012CAA Pin Descriptions/Functions Pin Name Description PWM Brightness Control Input for CABC operation. PWM is a high-impedance input and A1 PWM cannot be left floating, if not used connect to GND. A2 SDA Serial Data Connection for I2C-Compatible Interface. Hardware enable input. Drive this pin high to enable the device. Drive this pin low to force A3 HWEN the device into a low power shutdown. HWEN is a high-impedance input and cannot be left floating. Input Terminal to high-voltage Current Sink #1 (40V max). The boost converter regulates B1 HVLED1 the minimum of HVLED1, HVLED2 and HVLED3 to VHR. B2 SCL Serial Clock Connection for I2C-Compatible Interface. B3 IN Input Voltage Connection. Bypass IN to GND with a minimum 2.2 µF ceramic capacitor. Input Terminal to high-voltage Current Sink #2 (40V max). The boost converter regulates C1 HVLED2 the minimum of HVLED1, HVLED2 and HVLED3 to VHR. C2 GND Ground C3 GND Ground Input Terminal to high-voltage Current Sink #3 (40V max). The boost converter regulates D1 HVLED3 the minimum of HVLED1, HVLED2 and HVLED3 to VHR. Over-Voltage Sense Input. Connect OVP to the positive terminal of the inductive boost's D2 OVP output capacitor (COUT). Drain Connection for the internal NFET. Connect SW to the junction of the inductor and the D3 SW Schottky diode anode. This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: LM3697 |
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