14

Serial Memory Products

Product Specifications

Device

Density

(Organization)

Max

Clock

Frequency

Operating

Voltage

(AA, LC, C)

Temperature

(I, E, H)

Endurance

(E/W

Cycles)

Data

Retention

Write

Protect

(Hardware)

Packages

24XX00

128 bits (x8)

400 kHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

No

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN

24XX01/014

1 Kbit (x8)

400 kHz

1.7V-5.5V

-40°C to +150ºC

1M

200 years

W, ½

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, SC70

24XX02/024

2 Kbits (x8)

400 kHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

W, ½

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, SC70

24XX04

4 Kbits (x8)

400 kHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

W, ½

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP

24XX08

8 Kbits (x8)

400 kHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

W, ½

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP

24XX16

16 Kbits (x8)

400 kHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

W, ½

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP

24XX32

32 Kbits (x8)

400 kHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

W, ¼

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP

24XX64/65

64 Kbits (x8)

1 MHz

1.7V-5.5V

-40°C to +125ºC

1M/10M

200 years

W, ¼

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, WLCSP

24XX128

128 Kbits (x8)

1 MHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

Yes

PDIP, SOIC, TSSOP, 2x3 T-DFN, 6x5 DFN, MSOP, WLCSP

24XX256

256 Kbits (x8)

1 MHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

Yes

PDIP, SOIC, TSSOP, 6x5 DFN, MSOP, WLCSP

24XX512

512 Kbits (x8)

1 MHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

Yes

PDIP, SOIC, TSSOP, 6x5 DFN, WLCSP

24XX1025

1 Mbit (x8)

1 MHz

1.7V-5.5V

-40°C to +125ºC

1M

200 years

Yes

PDIP, SOIC, SOIJ, 6x5 DFN

SPI EEPROM Products

Device

Density

(Organization)

Max Clock

Frequency

Operating

Voltage

(AA, LC)

Temperature

(I, E, H)

Endurance

(E/W

Cycles)

Data

Retention

Write Protect

(Software)

Packages

25XX010A

1 Kbit (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23

25XX020A

2 Kbits (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23

25XX040A

4 Kbits (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP, SOT-23

25XX080C/D

8 Kbits (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN

25XX160C/D

16 Kbits (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN

25XX320A

32 Kbits (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN

25XX640A

64 Kbits (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, MSOP, 2x3 T-DFN

25XX128

128 Kbits (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, 6x5 DFN

25XX256

256 Kbits (x8)

10 MHz

1.8V-5.5V

-40°C to +150ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, 6x5 DFN

25XX512

512 Kbits (x8)

20 MHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, 6x5 DFN

25XX1024

1 Mbit (x8)

20 MHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

W, ½, ¼

PDIP, SOIJ, 6x5 DFN

1. Voltage Range: AA = 1.7- 5.5V; LC = 2.5-5.5V; C = 4.5-5.5V

2. I = -40ºC to 85ºC; E = -40ºC to 125ºC; H = -40ºC to 150ºC

3. Pb-Free, Halogen Free and RoHS Compliant

4. Write Protect: W = Whole Array, ½ = Half Array, ¼ = Quarter Array

5. ESD protection > 4 kV (HBM); > 400V (MM) on all pins

6. H Temp is SOIC only

Microwire EEPROM Products

Device

Density

(x8 or x16)

Max

Clock

Frequency

Operating

Voltage

(AA, LC, C)

Temperature

(I, E)

Endurance

(E/W

Cycles)

Data

Retention

Write

Protect

(Hardware)

Read

Current

Packages

93XX46A/B/C

1 Kbit

3 MHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

No

1 mA

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP

93XX56A/B/C

2 Kbits

3 MHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

No

1 mA

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP

93XX66A/B/C

4 Kbits

3 MHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

No

1 mA

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP

93XX76A/B/C

8 Kbits

3 MHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

Yes

1 mA

PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP

93XX86A/B/C

16 Kbits

3 MHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

Yes

1 mA

PDIP, SOIC, TSSOP, 2x3 T-DFN, MSOP

A: x8 Organization, B: x16 Organization, C: Selectable x8 or x16 Organization

Device

Density

(Organization)

Max

Clock

Frequency

Operating

Voltage

(AA, LC)

Temperature

(I, E)

Endurance

(E/W

Cycles)

Data

Retention

Write

Protect

(Software)

Packages

11XX010

1 Kbit (x8)

100 kHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, TO92, WLCSP

11XX020

2 Kbits (x8)

100 kHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, TO92, WLCSP

11XX040

4 Kbits (x8)

100 kHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, TO92, WLCSP

11XX080

8 Kbits (x8)

100 kHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, TO92, WLCSP

11XX160

16 Kbits (x8)

100 kHz

1.8V-5.5V

-40°C to +125ºC

1M

200 years

W, ½, ¼

PDIP, SOIC, TSSOP, SOT-23, 2x3 T-DFN, MSOP, TO92, WLCSP

Serial SRAM Products

Device

Density

Organization)

Max

Clock Frequency

Operating

Voltage (A, K)

Temperature

(I, E)

Read Current

(mA)

Max Standby

Current

Packages

23x640

8KB (64 Kbits)

20 MHz

1.8V, 3V

-40°C to +125ºC

3 mA

4 μA

PDIP, SOIC, TSSOP

23X256

32 KB (256 Kbits)

20 MHz

1.8V, 3V

-40°C to +125ºC

3 mA

4 μA

PDIP, SOIC, TSSOP

1. Voltage Range: A = 1.5- 1.95V; K = 2.7V-3.6V

2. All Devices are Pb-Free, RoHS Compliant and Halogen Free