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SD411

CORPORATION

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC unless otherwise noted)

VDS

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +20V

VSD

Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +10V

VDB

Drain-Body voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V

VSB

Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +15V

VGD

Gate-Drain Voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V

VGS

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +25V

VGB

Gate-Body Voltage . . . . . . . . . . . . . . . . . . . . . . . . +25V

VG1G2 Gate-to-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . +25V

VD1D2 Drain-to-Drain Voltage . . . . . . . . . . . . . . . . . . . . . +20V

VS1S2 Source-to-Source Voltage . . . . . . . . . . . . . . . . . . +15V

Continuous Drain Current . . . . . . . . . . . . . . . . +50 mA

Device Dissipation (each side). . . . . . . . . . . . 360 mW

Derating Factor . . . . . . . . . . . . . . . . . . . . 2.88 mW/

Total Device Dissipation . . . . . . . . . . . . . . . . 500 mW

Derating Factor . . . . . . . . . . . . . . . . . . . . . . . 4 mW/

Operating Junction

Temperature Range . . . . . . . . . . . . . . . . -55 to +125

Storage Temperature Range . . . . . . . . . -55 to +150

Lead Temperature (1/16’ from mounting

surface for 10 sec.). . . . . . . . . . . . . . . . . . . . . . +260

ELECTRICAL CHARACTERISTICS(TA = +25

oC per side unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNITS

TEST CONDITIONS

STATIC

BVDS

Drain Source Breakdown Voltage

ID = 10 nA, VGS = VBS = -5V

BVSD

Source-Drain Breakdown Voltage

IS = 10 nA, VGD = VBD = -5V

BVDB

Drain-Body Breakdown Voltage

ID = 10 nA, VGB = 0 Source

Open

BVSB

Source-Body Breakdown Voltage

IS = 10

µA, VGB = 0 Drain Open

IDSX

Drain-Source Leakage Current

0.7

VDS = 20V, VGS = VBS = -5V

IGBS

Gate-Body Leakage Current

1.0

µA

VGS = 25V, VDB = VSB = 0

VGS(th)

Gate-Source Threshold Voltage

0.5

1.0

2.0

ID = 1.0

µA, VDS = VGS, VSB = 0

rDS(ON)

Drain-Source ON Resistance

(1)

ohms

ID = 1.0mA, VGS = 5.0V, VSB = 0

DYNAMIC

gfs

Common-Source Forward Transconductance

(1)

VDS = 10V, ID = 20mA, VSB = 0

f = 1KHZ

Ciss

Common-Source Input Capacitance

3.5

VDS = 10V, VGS = VBS = 0

f = 1MHZ

Coss

Common-Source Output Capacitance

1.2

Crss

Common Source Reverse Transfer Capacitance

0.3

C(gs + sb)

Source Node Capacitance

4.5

MATCH

| VGS1 - VGS2 |

Differential Gate Source Voltage

VDS = 10V

ID = 5.0mA

VSB = 0

∆| VGS1 - VDS2 |

∆T

Differential Drift

µV/ oC

TA = -55

oC to

+125C

NOTE 1: Pulse Test, 80sec, 1% Duty Cycle

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