MJE13009 datasheet(6/9 Pages) UTC

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MJE13009

NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

6 of 9

www.unisonic.com.tw

QW-R203-024,F

TABLE 3. TYPICAL INDUCTIVE SWITCHING PERFORMANCE

IC(A)

TC(℃)

tSV(ns)

tRV(ns)

tFI(ns)

tTI(ns)

tC(ns)

100

770

1000

100

230

150

160

200

240

320

100

630

820

100

180

100

720

920

120

100

640

800

SWITCHING TIME NOTES

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and

voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE

power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate

measurements must be made on each waveform to determine the total switching time. For this reason, the following

new terms have been defined.

tSV = Voltage Storage Time, 90% IB1 to 10% VCEM

tRV = Voltage Rise Time, 10–90% VCEM

tFI = Current Fall Time, 90–10% ICM

tTI = Current Tail, 10–2% ICM

tC = Crossover Time, 10% VCEM to 10% ICM

An enlarged portion of the turn–off waveforms is shown in Fig. 13 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during storage time and the predominant switching power losses

occur during the crossover interval and can be obtained using the standard equation from AN–222:

PSWT = 1/2 VCCIC(tC) f

Typical inductive switching waveforms are shown in Fig. 14. In general, tRV + tFI ≈ tC. However, at lower test

currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25

and has become a

℃

benchmark for designers. However, for designers of high frequency converter circuits, the user oriented

specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which

are guaranteed at 100 .

℃

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