Document Number: 91055

www.vishay.com

S11-1049-Rev. C, 30-May-11

1

This document is subject to change without notice.

Power MOSFET

IRF740S, SiHF740S

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

400

0.55

63

9.0

32

Configuration

Single

N-Channel MOSFET

G

D

S

G D

S

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

SiHF740S-GE3

Lead (Pb)-free

IRF740SPbF

SiHF740S-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

± 20

Continuous Drain Current

10

A

6.3

40

Linear Derating Factor

1.0

W/°C

0.025

520

mJ

10

A

13

mJ

Maximum Power Dissipation

125

W

3.1

dV/dt

4.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply