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OPA832IDBVT Datasheet(PDF) 12 Page - National Semiconductor (TI) |
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OPA832IDBVT Datasheet(HTML) 12 Page - National Semiconductor (TI) |
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12 / 30 page ![]() OPA832 SBOS266E − JUNE 2003 − REVISED AUGUST 2008 www.ti.com 12 TYPICAL CHARACTERISTICS: VS = +3.3V At TA = 25°C, G = +2, and RL = 150Ω to VCM = 0.75V, unless otherwise noted (see Figure 2). 3 0 −3 −6 −9 −12 −15 SMALL−SIGNAL FREQUENCY RESPONSE Frequency (MHz) 1 10 100 300 G= −1 G= +2 V O =0.2VPP R L =150Ω 1.65 1.60 1.55 1.50 1.45 1.40 1.35 SMALL−SIGNAL PULSE RESPONSE Time (10ns/div) G= +2V/V R L =150Ω V O = 200mVPP 60 50 40 30 20 10 0 REQUIRED R S vs CAPACITIVE LOAD Capacitive Load (pF) 1 10 100 1k 1dB Peaking Targeted 3 0 −3 −6 −9 −12 −15 LARGE−SIGNAL FREQUENCY RESPONSE Frequency (MHz) 1 10 100 300 V O =0.5VPP V O =1VPP V O =2VPP R L =150Ω G= +2V/V 2.1 1.9 1.7 1.5 1.3 1.1 0.9 LARGE−SIGNAL PULSE RESPONSE Time (10ns/div) G= +2V/V R L =150Ω V O =1VPP 3 0 −3 −6 −9 −12 −15 FREQUENCY RESPONSE vs CAPACITIVE LOAD Frequency (MHz) 110 100 300 C L = 1000pF C L = 100pF C L =10pF |
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