HAT2217C datasheet(2/7 Pages) RENESAS

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HAT2217C

R07DS1183EJ0400 Rev.4.00

Page 2 of 6

Mar 19, 2014

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

+20

–10

—

IG =

±100 μA, VDS = 0

Gate to source leak current

IGSS

—

±10

μA

VGS = 16 / –8 V, VDS = 0

Zero gate voltage drain current

IDSS

—

μA

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(th)

—

ID = 1 mA, VDS = 10 V

Note3

Static drain to source on state

resistance

RDS(on)

—

105

132

ID = 1.5 A, VGS = 10 V

Note3

RDS(on)

—

126

183

ID = 1.5 A, VGS = 4.5 V

Note3

Forward transfer admittance

| yfs |

2.8

4.3

—

ID = 1.5 A, VGS = 10 V

Note3

Input capacitance

Ciss

—

275

—

VGS = 0

f = 1 MHz

VDS = 10 V

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Total gate charge

—

4.5

—

VGS = 10 V

VDS = 10 V

ID = 3 A

Gate to source charge

Qgs

—

0.8

—

Gate to drain charge

Qgd

—

0.7

—

Turn-on delay time

td(on)

—

VGS = 10 V

ID = 1.5 A

VDD = 10 V

RL = 6.6

Ω , Rg = 4.7 Ω

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

Body–drain diode forward voltage

VDF

—

0.85

1.25

IF = 3 A, VGS = 0

Notes: 3. Pulse test

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