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HAT2217C Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # HAT2217C
Description  Silicon N Channel MOS FET Power Switching
PDF  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2217C Datasheet(HTML) 3 Page - Renesas Technology Corp

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HAT2217C
R07DS1183EJ0400 Rev.4.00
Page 3 of 6
Mar 19, 2014
Main Characteristics
1.6
1.2
0.8
0.4
0
50
100
150
200
30
10
3
1
0.3
0.1
0.1 0.3
0.03
1
3
10 30
100
10
8
6
4
2
0
24
6
8
10
10
8
6
4
2
0
12
34
5
0.03
0.01
100
Ta = 25°C,1shot pulse
When using the FR4 board.
2.5 V
3 V
Tc = 75
°C
25
°C
−25°C
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
s
m
1
s
m
0
1
=
W
P
10
μs
4 V
600
400
200
0
48
12
16
20
0.1
10
1
100
100
1000
10
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
800
ID = 3 A
1.5 A
0.5 A
Pulse Test
VGS = 10 V
Pulse Test
Operation in this
area is limited by
RDS(on)
3.5 V
100
μs
5 V
10 V
VGS = 2 V
-4.5V



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