TC200

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-087.a

°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

60

V

Collector-Emitter Voltage

45

V

Emitter-Base Voltage

5

V

Collector Current

500

mA

Emitter Current

-500

mA

Collector Power Dissipation

625

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

0.1

µA

Emitter Cut-Off Current

0.1

µA

DC Current Gain

70

240

25

Collector-Emitter Saturation Voltage

0.25

V

Base-Emitter Voltage

1.0

V

Current Gain Bandwidth Product

300

MHz

Output Capacitance

7.0

pF

RANK

O

Y

70 ~ 140

120 ~ 240