UT75N02

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-328.c

PARAMETER

SYMBOL

RATINGS

UNIT

Drain Source Voltage

25

V

Gate-Source Voltage

±20

V

Continuous Drain Current

75

A

Pulsed Drain Current (Note 2)

170

A

Avalanche Current

60

A

Avalanche Energy

L=0.1mH

140

mJ

Repetitive Avalanche Energy (Note 3) L=0.05mH

5.6

mJ

Power Dissipation

TO-220

40

W

TO-251

28

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note:1.

2.

3.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width limited by maximum junction temperature.

Duty cycle≤1%.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-251

110

Junction to Case

TO-220

3.13

°C/W

TO-251

4.53