UT75N02 datasheet(3/4 Pages) UTC

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UT75N02

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-328.c

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=250µA

Drain-Source Leakage Current

IDSS

VDS = 20V, VGS = 0V

µA

VDS =20V, VGS = 0V, TJ = 125°C

250

µA

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±250

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS= VGS, ID=250µA

1.5

On-State Drain Current (Note 1)

ID(ON)

VDS = 10V, VGS = 10V

Static Drain-Source On-Resistance

(Note 1)

RDS(ON)

VGS = 10V, ID = 30A

mΩ

VGS = 7V, ID = 24A

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=15V, VGS=0 V, f=1MHz

5000

Output Capacitance

COSS

1800

Reverse Transfer Capacitance

CRSS

800

SWITCHING PARAMETERS (Note 2)

Turn-ON Delay Time

tD(ON)

VDS = 15V, VGS = 10V, ID≈30A

RGS = 2.5Ω, RL = 1Ω,

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

Total Gate Charge

VDS=0.5V(BR)DSS, VGS=10V, ID=35A

140

Gate Source Charge

QGS

Gate Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward Voltage (Note 1)

VSD

IF = IS, VGS = 0V

1.3

Continuous Current

Notes: 1. Pulse test : Pulse Width≤300μsec, Duty Cycle≤2%

2. Independent of operating temperature

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