MS90N10 datasheet(2/8 Pages) BWTECH

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MS90N10 100V N-Channel MOSFET

©Bruckewell Technology Corporation Rev. A -2013

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

±100

VDS = 80 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

120

VGS = 10 V, ID = 20 A

Drain-Source On-Resistance

rDS(on)

VGS = 5.5 V, ID = 18 A

mΩ

Forward Transconductance

gfs

VDS = 15 V, ID = 20 A

Diode Forward Voltage

VSD

IS = 45 A, VGS = 0 V

1.1

Dynamic

Total Gate Charge

114

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 50 V, VGS = 5.5 V, ID = 20 A

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

230

Fall Time

VDS = 50 V, RL = 2.5 Ω, ID = 20 A, VGEN = 10

V, RGEN = 6 Ω

Input Capacitance

Ciss

9235

Output Capacitance

Coss

811

Reverse Transfer Capacitance

Crss

VDS = 15 V, VGS = 0 V, f = 1 MHz

752

Notes

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production

testing.

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