FEATURES

APPLICATIONS

SEMICONDUCTOR

RoHS

RoHS

High voltage NPN Power transistor

Nell High Power Products

8A, 1500V

Page 1 of 4

www.nellsemi.com

THERMAL CHARACTERISTICS (T = 25°C)

C

UNIT

PARAMETER

1.0

VALUE

Thermal resistance, junction to case

SYMBOL

ºC/W

BU508 Series

TO-3PB

(BU805B)

B

C

E

C

1

2

3

TO-247AB

(BU508C)

UNIT

W

V

°C

A

VALUE

8

15

1500

9

4

700

125

150

-55 to 150

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)

C

V

=0

BE

TEST CONDITIONS

I =0

B

T =25°C

C

Collector power dissipation

PARAMETER

Peak collector current

Collector current-continuous

Storage temperature

Emitter to base voltage

Collector to emitter voltage

Collector to emitter voltage

SYMBOL

Base Current

Junction temperature

I =0

C

Stable performance vs. operating

temperature variation

High ruggedness

Tigth h

range at operating collector current

FE

TO-3P and TO-247AB package which can be

installed to the heat sink with one screw

Switching mode power supplies and

general purpose

High frequency inverters

UNIT

V

700

0.2

1.0

30

2

5

2.5

0.2

1.1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

TEST CONDITIONS

V

=1500V, l =0

CEO

E

Storage time

Collector to emitter saturation voltage

PARAMETER

Collector to emitter voltage

Base to emitter saturation voltage

Emitter cutoff current

Collector cutoff current ( V

= 0 )

BE

SYMBOL

Fall time

Min.

Typ.

Max.

V

=9V, l =0

EBO

C

I =0

B

I =0.1A, V

=5V

C

CE

I =4.5A,

C

V

=5V

CE

I =4.5A, I =2A

C

B

I =4.5A, I

=0.5A, V

C

B(on)

=-2.7V

BE(off)

f =16KHz, L

=4.5µH

h

BB(off)

Forward current transfer ratio

(DC current gain)

mA

T =125°C

C

T =25°C

C

Collector to emitter sustaining voltage

V

*

CEO(SUS)

I =100mA

C

700

10

I =4.5A, I =1.6A

C

B

1.0

µ

S

*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.

V

NPN

C

B

E

(2)

(1)

(3)

p