SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

IRF830 Series

www.nellsemi.com

Page 1 of 7

N-Channel Power MOSFET

(4.5A, 500Volts)

The Nell IRF830 are N-Channel enhancement mode silicon

gate power field effect transistors. They are designed, tested

and guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation.

DESCRIPTION

Low reverse transfer capacitance

(C

= 68pF typical)

RSS

R

= 1.5Ω @ V

= 10V

DS(ON)

GS

Ultra low gate charge(38nC Max.)

Fast switching capability

100% avalanche energy specified

Improved dv/dt capability

150°C operation temperature

FEATURES

PRODUCT SUMMARY

I (A)

D

4.5

V

(V)

DSS

500

1.5 @ V

= 10V

GS

38

R

(Ω)

DS(ON)

Q (nC) max.

G

UNIT

V /ns

V

A

mJ

ºC

-55 to 150

VALUE

4.5

2.9

500

±20

18

500

74

3.5

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)

C

T =25°C to 150°C

J

TEST CONDITIONS

R

=20KΩ

GS

V

=10V,

GS

T =25°C

C

V

=10V,

GS

T =100°C

C

Operation junction temperature

Storage temperature

Peak diode recovery dv/dt(Note 3)

PARAMETER

Pulsed Drain current(Note 1)

Continuous Drain Current

Total power dissipation

Gate to Source voltage

Drain to Gate voltage

Drain to Source voltage(Note 1)

SYMBOL

dv/dt

.

.

lbf in (N m)

300

Maximum soldering temperature, for 10 seconds

Mounting torque, #6-32 or M3 screw

-55 to 150

Note:

10 (1.1)

1.6mm from case

Repetitive avalanche current(Note 1)

4.5

T =25°C

C

2

DD

AS

G

J

280

Single pulse avalanche energy(Note 2)

3

, starting T

SD

DD

(BR)DSS

0.59

Derating factor above 25

They are designed as an extremely efficient and reliable

device for use in a wide variety of applications such as

switching regulators. convertors, UPS, switching mode power

supplies and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These transistors can be operated directly from integrated

circuits.

(IRF830A)

TO-220AB

D

S

G

D

mJ

7.4

Repetitive avalanche energy(Note 1)

l

=4.5A, R

=10V

AR

GS

=50Ω, V

GS

l

=4.5A, =24mH

AS

L

D (Drain)

G

(Gate)

S (Source)

W