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7P30 Datasheet(PDF) 2 Page - Unisonic Technologies |
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7P30 Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 5 page ![]() 7P30 POWER MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-918.C ABSOLUTE MAXIMUM RATING (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -300 V Gate-Source Voltage VGSS ±30 V Drain Current DC ID(DC) -6.0 A Pulsed (Note 2) ID(pulse) -24 A Single Avalanche Current (Note 3) IAS -6.0 A Single Avalanche Energy (Note 3) EAS 180 mJ Power Dissipation TC=25°C PD1 35 W TA=25°C PD2 2.0 W Channel Temperature TCH 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pw≤10µs, Duty cycle≤1%. 3. Starting TCH=25°C, RG=25Ω, VGS=-20V→0. ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Leakage Current IDSS VDS=-300V, VGS=0V -1.0 µA Gate-Source Leakage Current Forward IGSS VGS=+30V, VDS=0V +100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=-250μA -2.0 -4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-3.0A 1 Ω DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-10V, f=1.0MHz 1040 pF Output Capacitance COSS 360 pF Reverse Transfer Capacitance CRSS 70 pF SWITCHING PARAMETERS Total Gate Charge QG VGS=-10V, VDD=-200V, ID=-6.0A 23.1 nC Gate to Source Charge QGS 7.1 nC Gate to Drain Charge QGD 12.9 nC Turn-ON Delay Time tD(ON) VDD=-125V, VGS(ON)=-10V, ID=-3.0A, RG=10Ω, RL=42Ω 24 ns Rise Time tR 16 ns Turn-OFF Delay Time tD(OFF) 47 ns Fall-Time tF 14 ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IF=-6.0A, VGS=0V 3.4 V Body Diode Reverse Recovery Time tRR IF=-6.0A, VGS=0V, di/dt=50A/µs 155 ns Body Diode Reverse Recovery Charge QRR 930 nC |
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