UFP264

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-813.B



PARAMETER

SYMBOL

RATINGS

UNIT

250

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

38

A

Pulsed (Note 1)

152

A

Avalanche Energy

1000

mJ

28

mJ

Power Dissipation

280

W

Derate above 25°C

2.2

mW/°C

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

40

°C/W

Junction to Case

0.45

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

250

V

Drain-Source Leakage Current

25

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

(Note 2)

Gate Threshold Voltage

2

3

4

V

Static Drain-Source On-State Resistance

75

mΩ

DYNAMIC PARAMETERS

Input Capacitance

3900

pF

Output Capacitance

950

pF

Reverse Transfer Capacitance

250

pF

SWITCHING PARAMETERS

Total Gate Charge

130

170

nC

Gate to Source Charge

26

nC

Gate to Drain Charge

55

nC

Turn-ON Delay Time

30

ns

Rise Time

180

ns

Fall-Time

35

ns

Off-Voltage Rise Time

135

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

(Note 1)

38

A

Maximum Body-Diode Pulsed Current

152

A

Drain-Source Diode Forward Voltage

1.8

V

Notes: 1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration=300µs, Duty cycle ≤2%