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BTB40 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # BTB40
Description  40A STANDARD TRIAC
PDF  3 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BTB40 Datasheet(HTML) 2 Page - Unisonic Technologies

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BTB40
Preliminary
TRIACS
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
VER.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
On-State RMS Current (Full Sine Wave) TC=95°C
IT(RMS)
40
A
Non Repetitive Surge Peak On-State
Current (Full Cycle, TJ initial=25°C)
F=50Hz, t=20ms
ITSM
400
A
F=60Hz, t=16.7ms
420
A
I
2t Value for Fusing
tp=10ms
I
2t
1000
A
2s
Critical Rate of Rise of On-State Current:
IG=2xIGT, tr≤100ns
F=120Hz, TJ=125°C
dI/dt
50
A/µs
Non Repetitive Surge Peak Off-State
Voltage
tp=10ms, TJ=25°C
VDSM/VRSM
VDSM/VRSM+100
V
Peak Gate Current
tp=20µs, TJ=125°C
IGM
8
A
Average Gate Power Dissipation
TJ=125°C
PG(AV)
1
W
Storage Junction Temperature
TSTG
-40~+150
°C
Operating Junction Temperature
TJ
-40~+125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
DEVICE SUMMARY
PARAMETER
SYMBOL
RATINGS
UNIT
On-State RMS Current
IT(RMS)
40
A
Repetitive Peak Off-State Voltage
VDRM/VRRM
600
V
Triggering Gate Current
IGT
50
mA
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
50
°C/W
Junction to Case (AC)
θJC
0.6
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25 °C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Gate Trigger Current (Note 1)
IGT
VD=12V, RL=33Ω
I-II-III
50
mA
IV
100
mA
Gate Trigger Voltage
VGT
ALL
1.3
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3kΩ,
TJ=125°C
ALL
0.2
V
Holding Current (Note 2)
IH
IT=500mA
80
mA
Latching Current
IL
IG=1.2IGT
I-III-IV
70
mA
II
160
mA
Critical Rate of Rise of Off-State
Voltage (Note 2)
dV/dt
VD=67%VDRM, Gate Open, TJ=125°C 500
V/µs
Critical Rate of Rise of Off-State
Voltage at Commutation (Note 2)
(dV/dt)c
(dI/dt)c=20A/ms, TJ=125°C
10
V/µs
STATIC CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Peak On-State Voltage (Note 1)
VT
ITM=60A, tp=380μs, TJ=25°C
1.55
V
Threshold Voltage (Note 2)
VTO
TJ=125°C
0.85
V
Dynamic Resistance (Note 2)
RD
TJ=125°C
10
mΩ
Repetitive Peak Off-State Current
IDRM
VDRM=VRRM, TJ=25°C
5
µA
IRRM
VDRM=VRRM, TJ=125°C
5
mA
Notes: 1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of MT2 referenced to MT1



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