Electronic Components Datasheet Search
  English  ▼

X  

IRLMS6702 Datasheet(PDF) 2 Page - International Rectifier

Part # IRLMS6702
Description  Generation V Technology
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLMS6702 Datasheet(HTML) 2 Page - International Rectifier

  IRLMS6702 Datasheet HTML 1Page - International Rectifier IRLMS6702 Datasheet HTML 2Page - International Rectifier IRLMS6702 Datasheet HTML 3Page - International Rectifier IRLMS6702 Datasheet HTML 4Page - International Rectifier IRLMS6702 Datasheet HTML 5Page - International Rectifier IRLMS6702 Datasheet HTML 6Page - International Rectifier IRLMS6702 Datasheet HTML 7Page - International Rectifier IRLMS6702 Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
IRLMS6702
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.005 –––
V/°C Reference to 25°C, ID = -1mA
––– ––– 0.200
VGS = -4.5V, ID = -1.6A ƒ
––– ––– 0.375
VGS = -2.7V, ID = -0.80A ƒ
VGS(th)
Gate Threshold Voltage
-0.70 ––– –––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
1.5 ––– –––
S
VDS = -10V, ID = -0.80A
––– ––– -1.0
VDS = -16V, VGS = 0V
––– ––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -12V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– 5.8
8.8
ID = -1.6A
Qgs
Gate-to-Source Charge
––– 1.8
2.6
nC
VDS = -16V
Qgd
Gate-to-Drain ("Miller") Charge
––– 2.1
3.1
VGS = -4.5V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
–––
13
–––
VDD = -10V
tr
Rise Time
–––
20
–––
ID = -1.6A
td(off)
Turn-Off Delay Time
–––
21
–––
RG = 6.0Ω
tf
Fall Time
–––
18
–––
RD = 6.1Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
––– 210 –––
VGS = 0V
Coss
Output Capacitance
––– 130 –––
pF
VDS = -15V
Crss
Reverse Transfer Capacitance
–––
73
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -1.6A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
25
37
ns
TJ = 25°C, IF = -1.6A
Qrr
Reverse RecoveryCharge
–––
15
22
nC
di/dt = -100A/µs ƒ
Source-Drain Ratings and Characteristics
A
-13
–––
–––
–––
-1.7
–––
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ I
SD ≤ -1.6A, di/dt ≤ -100A/µs, V
DD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 5sec.



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com