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DS2223 Datasheet(PDF) 10 Page - Dallas Semiconductor |
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DS2223 Datasheet(HTML) 10 Page - Dallas Semiconductor |
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10 / 10 page ![]() DS2223/DS2224 080598 10/10 AC ELECTRICAL CHARACTERISTICS (–40 °C to +85°C; VCC=1.4V ± 10%) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Time Slot tSLOT 70 µs Read Data Valid tRDV exactly 15 µs Release Time tRELEASE 0 15 45 µs Write 1 Low Time tLOW1 1 15 µs Write 0 Low Time tLOW0 60 µs Data Setup Time tSU 1 µs 8 Recovery Time tREC 1 µs AC ELECTRICAL CHARACTERISTICS (–40 °C to +85°C; VCC=2.0V to 5.5V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Time Slot tSLOT 60 µs Read Data Valid tRDV exactly 15 µs Release Time tRELEASE 0 15 45 µs Write 1 Low Time tLOW1 1 15 µs Write 0 Low Time tLOW0 60 µs Data Setup Time tSU 1 µs 8 Recovery Time tREC 1 µs NOTES: 1. All voltages are referenced to ground. 2. VPUP = external pull–up voltage to system sypply. 3. Input pull–down resistance to ground. 4. @ VOL=0.4V 5. 36 nanocoulombs per 264 time slots @ 1.5V (see Figure 6). 6. See Figure 7 for typical values over temperature. 7. @ VOL=0.2V 8. Read data setup time refers to the time the host must pull the 1–Wire line low to read a bit. Data is guaran- teed to be valid within 1 µs of this falling edge and will remain valid for 14 µs minimum (15 µs total from falling edge on the 1–Wire line). |
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