D

S11602 Rev.C-4

2 of 4

DT014

Notes:

2. Pulse Test: Pulse width

l 300µs, duty cycle l 2.0%.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

—

—

25

250

µA

Gate-Body Leakage, Forward

—

—

100

nA

Gate-Body Leakage, Reverse

—

—

-100

nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

2.0

3.0

4.0

V

Static Drain-Source On-Resistance

—

0.18

0.2

W

Forward Transconductance

—

2.0

—

m

DYNAMIC CHARACTERISTICS

Input Capacitance

—

155

—

pF

f = 1.0MHz

Output Capacitance

—60—

pF

Reverse Transfer Capacitance

—15—

pF

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

—10

20

ns

W

Turn-On Rise Time

—

64

100

ns

Turn-Off Delay Time

—10

20

ns

Turn-Off Fall Time

—10

20

ns

Total Gate Charge

—

5.0

11

nC

Gate-Source Charge

—

1.2

3.1

nC

Gate-Drain Charge

—

2.0

5.8

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode

Forward Current

—

—

2.7

A

Max Pulsed Drain-Source Diode

Forward Current

—

—

22

A

Drain-Source Diode Forward Voltage

(Note 2)

—

0.95

1.6

V

Reverse Recovery Time

—

—

140

ns