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SP4309 Datasheet(PDF) 2 Page - SIPAT Co,Ltd |
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SP4309 Datasheet(HTML) 2 Page - SIPAT Co,Ltd |
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2 / 8 page ![]() Product Specification SP4309 Page 2 of 8 Exposed Ground Paddle N/C VDD N/C RF1 RF2 N/C N/C N/C N/C 18 17 16 15 14 13 2 3 4 5 6 1 N/C ACG ACG Table 2. Pin Descriptions Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS™ device, observe the same precautions that you would use with other ESD- sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rate specified in Table 4. Exposed Solder Pad Connection The exposed solder pad on the bottom of the package must be grounded for proper device operation. Figure 3. Pin Configuration (Top View) Pin No. Pin Name Description 1 N/C No Connect 2 VDD Power supply pin 3 N/C No Connect 4 RF1 RF port 5 N/C5 No Connect 6 ACG6 AC Ground connection 7 ACG6 AC Ground connection 8 ACG6 AC Ground connection 9 ACG6 AC Ground connection 10 ACG6 AC Ground connection 11 ACG6 AC Ground connection 12 N/C7 No Connect 13 ACG6 AC Ground connection 14 N/C5 No Connect 15 RF2 RF port 16 N/C5 No Connect 17 N/C5 No Connect 18 N/C5 No Connect 19 C16 Attenuation control bit, 16 dB 20 C8 Attenuation control bit, 8 dB 21 C4 Attenuation control bit, 4 dB 22 C2 Attenuation control bit, 2 dB 23 C1 Attenuation control bit, 1 dB 24 C0.5 Attenuation control bit, 0.5 dB Paddle GND Ground for proper operation Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS™ devices are immune to latch-up. Table 4. Absolute Maximum Ratings Table 3. Operating Ranges C16 C8 C4 C2 C1 C0.5 Attenuation State 1 1 1 1 1 1 Reference Loss (IL) 1 1 1 1 1 0 0.5 dB 1 1 1 1 0 1 1 dB 1 1 1 0 1 1 2 dB 1 1 0 1 1 1 4 dB 1 0 1 1 1 1 8 dB 0 1 1 1 1 1 16 dB 0 0 0 0 0 0 31.5 dB Table 6. Truth Table Symbol Parameter/Conditions Min Max Units VDD Power supply voltage -0.3 6.0 V VI Voltage on any DC input -0.3 6.0 V TST Storage temperature range -65 150 °C TOP Operating temperature range -40 85 °C P IN Input power (50 Ω) 30 dBm VESD ESD voltage (Human Body Model) 2000 V Parameter Min Typ Max Units VDD Power Supply Voltage 3.0 3.3 5.5 V IDD Power Supply Current 100 250 µA P IN Input power (50 Ω) +24 dBm Table 5. Control Voltage State Bias Condition Low 0 to +1.0 Vdc at 2 µA (typ) High +2.0 to +5 Vdc at 10 µA (typ) Notes: 5. For improved RF performance these No Connect pins can be connected to RF ground. 6. Pins can either be grounded directly or through coupling capacitors 7. Pin can either be grounded or No Connect The standard 3V or 5V CMOS control logic is independent of supply voltage. Tel: +86-23-62808818 Fax: +86-23-62805284 www.sipatsaw.com / sawmkt@sipat.com |
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