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ACR400SE Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # ACR400SE
Description  Fast Turn-off Asymmetric Thyristor
PDF  5 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

ACR400SE Datasheet(HTML) 3 Page - Dynex Semiconductor

  ACR400SE Datasheet HTML 1Page - Dynex Semiconductor ACR400SE Datasheet HTML 2Page - Dynex Semiconductor ACR400SE Datasheet HTML 3Page - Dynex Semiconductor ACR400SE Datasheet HTML 4Page - Dynex Semiconductor ACR400SE Datasheet HTML 5Page - Dynex Semiconductor  
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ACR400SE
3/5
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DWM = 12V, RL = 30Ω, Tcase = 25
oC
Typ.
Max.
Units
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DWM = 12V, RL = 30Ω, Tcase = 25
oC
I
GT
Gate trigger current
-5
V
-
500
mA
V
FGM
Peak forward gate voltage
-
-40
V
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
-
P
GM
Peak gate power
-
-10
V
-10
A
-40
W
-10
W
-
Forward
--
W
Reverse
Average time 10ms max
P
G(AV)
Average gate power
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 1500A peak, T
case = 25
oC
I
RRM/IDRM
Peak reverse and off-state current
At V
RRM/VDRM, Tcase = 125
oC
From V
DRM to 125A
Gate source 15V, 15
Ω
t
r = 50ns.
dV/dt
Maximum linear rate of rise of off-state voltage
To V
DRM Tj = 125
oC, Gate open circuit
Min.
Max.
Units
-
3.25
V
-60
mA
-
1000
V/
µs
-
500
A/
µs
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj = 125
oC
r
T
On-state slope resistance
At T
vj = 125
oC
Latching current
1.8
-V
-
0.9
m
Ω
-
I
L
500
-
mA
I
H
Holding current
-
t
d
Delay time
V
D = 300V, gate source = 15V, 15Ω
100
-
mA
-
800
ns
I
T = 500A, square wave 50µs pulse, Tj =
120˚C, dI
RR/dt = 50A/µs,
dV/dt = 500V/
µs to 75% V
DRM.
µs
10.0
-
Turn-off time
t
q



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