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GP800DCM18 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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GP800DCM18 Datasheet(HTML) 1 Page - Dynex Semiconductor |
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1 / 10 page ![]() GP800DCM18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com FEATURES s High Thermal Cycling Capability s 800A Per Module s Non Punch Through Silicon s Isolated MMC Base with AlN Substrates APPLICATIONS s High Reliability Inverters s Motor Controllers s Traction Drives s Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800DCM18 is an1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. ORDERING INFORMATION Order As: GP800DCM18 Note: When ordering, please use the whole part number. KEY PARAMETERS V CES 1800V V CE(sat) (typ) 3.5V I C (max) 800A I C(PK) (max) 1600A GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 Fig. 1 Chopper switch circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: D (See package details for further information) 3(C 1) 4(E 2) 2(C 2) 7(C1) 5(E1) 6(G1) 1(E 1) GPxxxDCxxx-xxx |
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