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MA5114 Datasheet(PDF) 2 Page - Dynex Semiconductor

Part # MA5114
Description  Radiation hard 1024x4 Bit Static RAM
PDF  12 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

MA5114 Datasheet(HTML) 2 Page - Dynex Semiconductor

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MA5114
2/12
Symbol
Parameter
Min.
Max.
Units
VCC
Supply Voltage
-0.5
7
V
VI
Input Voltage
-0.3
VDD+0.3
V
TA
Operating Temperature
-55
125
°C
TS
Storage Temperature
-65
150
°C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at TA = -55°C to +125°C with VDD = 5V ±10% and to post 100k Rad(Si) total dose
radiation at TA = 25°C with VDD = 5V ±10% (characteristics at higher radiation levels available on request).
2. Worst case at TA = +125°C, guaranteed but not tested at TA = -55°C.
GROUP A SUBGROUPS 1, 2, 3.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
VDD
Supply voltage
-
4.5
5.0
5.5
V
VlH
Input High Voltage
-
VDD/2
-
VDD
V
VlL
Input Low Voltage
-
VSS
-
0.8
V
VOH
Output High Voltage
IOH1 = -1mA
2.4
-
-
V
VOL
Output Low Voltage
IOL = 2mA
-
-
0.4
V
ILI
Input Leakage Current (note 2)
All inputs except
CS
--
±10
µA
ILO
Output Leakage Current (note 2)
Output disabled, VOUT = VSS or VDD
--
±20
µA
IPUI
Input Pull-Up Current
VIN = VSS on CS input only
-
-
-100
µA
IPDI
Input Leakage Current
VIN = VSS on CS input only
-
-
5
µA
IDD
Power Supply Current
fRC = 1MHz, CS = 50% mark:space-
12
16
mA
ISB1
Selected Supply Current
CS = VSS
-25
35
mA
ISB2
Standby Supply Current
Chip disabled
-
50
3000
µA
Figure 4: Electrical Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
VDR
VCC for Data Retention
CS = VDR
2.0
-
-
V
IDDR
Data Retention Current
CS = VDR, VDR = 2.0V
-
30
2000
µA
Figure 5: Data Retention Characteristics
CHARACTERISTICS AND RATINGS



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