©

1998

PRELIMINARY DATA SHEET

FEATURE

•

Ultra super mini-mold thin flat package

(1.4 mm

× 0.8 mm × 0.59 mm: TYP.)

•

Contains same chip as 2SC5004

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3V

Collector Current

60

mA

Total Power Dissipation

100

mW

Junction Temperature

125

°C

Storage Temperature

–65 to +125

°C

SILICON TRANSISTOR

2SC5431

NPN EPITAXIAL SILICON TRANSISTOR

FOR UHF TUNER OSC/MIX

Document No. P13075EJ1V0DS00 (1st edition)

Date Published February 1998 N CP(K)

Printed in Japan

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

100

nA

Emitter Cut-off Current

100

nA

Collector to Emitter Saturation

0.5

V

Voltage

DC Current Gain

60

120

Gain Bandwidth Product

3.0

4.3

GHz

Reverse Transfer Capacitance

0.6

1.2

pF

Insertion Power Gain

5.0

dB

≤ 350

µs, duty cycle ≤ 2 %

2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when

emitter pin is connected to the guard pin.

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

PACKAGE DIMENSIONS (in mm)

1.4 ± 0.05

0.8 ± 0.1

1

3

2

PIN CONNECTIONS

1: Emitter

2: Base

3: Collector

The information in this document is subject to change without notice.